Broadband infrared photoluminescence of TlCdI 3  iodide doped with bismuth

A. N. Romanov; D. N. Vtyurina; E. V. Haula; D. P. Shashkin; N. A. Pimkin; M. S. Kuznetsov; I. S. Lisitsky; V. N. Korchak

doi:10.1134/S1990793117010092

Broadband infrared photoluminescence of TlCdI₃ iodide doped with bismuth

Authors: Romanov A.N.¹, Vtyurina D.N.¹, Haula E.V.¹, Shashkin D.P.¹, Pimkin N.A.², Kuznetsov M.S.², Lisitsky I.S.², Korchak V.N.¹
Affiliations:
1. Semenov Institute of Chemical Physics
2. Giredmet
Issue: Vol 11, No 1 (2017)
Pages: 83-86
Section: Influence of External Factors on the Physicochemical Transformations
URL: https://journals.rcsi.science/1990-7931/article/view/198935
DOI: https://doi.org/10.1134/S1990793117010092
ID: 198935

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Abstract

The Bridgman–Stockbarger method is used to prepare single-crystal TlCdI₃ samples doped with bismuth. The material exhibits a broadband photoluminescence in the near-IR range with a maximum intensity at a wavelength of 1175 nm. The properties of bismuth-doped TlCdI₃ were compared with previously studied chlorides and bromides containing Bi⁺ impurity centers. It is demonstrated that the luminescence center in TlCdI₃ is not the monovalent bismuth cation.