A Modified Planar Graphene-Based Heterostructure (Barrier—Quantum Well)


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详细

A planar graphene-based heterostructure is considered, which behaves differently: as a barrier or a quantum well at small or large momenta of charge carriers, respectively. This heterostructure contains a strip of gapped graphene with a lower Fermi velocity, surrounded by gapless graphene with a higher Fermi velocity. In this configuration, an interface state arises at the intersection point of dispersion curves. The transformation of this interface state into a fundamental bound state is investigated.

作者简介

P. Pekh

Lebedev Physical Institute of the Russian Academy of Sciences

编辑信件的主要联系方式.
Email: pavel.pekh@phystech.edu
俄罗斯联邦, Leninskiy pr. 53, Moscow, 119991

A. Silin

Lebedev Physical Institute of the Russian Academy of Sciences

编辑信件的主要联系方式.
Email: a.p.silin@mail.ru
俄罗斯联邦, Leninskiy pr. 53, Moscow, 119991

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