Nonlinear induced reflection of light waves in semiconductors

Abstract

A scheme of nonlinear optical four-wave mixing of two counterpropagating laser beams on the surface of a semiconductor is proposed and analyzed. It is shown that the density modulation of the electron-hole plasma current carriers in the light-induced grating manifests itself in the probe beam depolarization signal after the reflection from the surface, which is sensitive to the state of the surface and presence of complex molecules on it.