Synthesis of Si–C–N–Fe films from volatile organosilicon substances-precursors and ferrocene. Part II. Properties of SiCxNyFez films obtained by thermal decomposition of tris(diethylamino)silane and ferrocene

详细

Thermodynamic modeling of the deposition of condensed phases of complex composition has been carried out in the Si–C–N–Fe–H–(He) system in the temperature range of 500–1300 K under total pressure of 10^–2–10^–1 Torr in the system using initial gas mixture of tris(diethylamino)silane HSi[N(C₂H₅)₂]₃, ferrocene (C₅H₅)₂Fe, and helium. Derived from the results of thermodynamic modeling, the method for the preparation of SiC_xN_yFe_z films using the high-temperature decomposition of the gas mixture of TDEAS, ferrocene, and helium at low pressure in the temperature range of 1073–1273 K has been developed. The dependence of the chemical and phase composition of the films on the conditions of synthesis has been determined using various methods of chemical analysis such as IR spectroscopy, Raman scattering, scanning electron microscopy, energy dispersion spectroscopy, X-ray phase analysis using synchrotron radiation, and X-ray photoelectron spectroscopy (XPS). The magnetic properties of the films have been studied by Faraday’s method and electron paramagnetic resonance. It has been shown that the films are paramagnetic at the temperature of synthesis of 1123 K, while at the deposition temperature of 1273 K they are ferromagnetic. The mechanical properties of the films were characterized by nanoindentation technique.