Effect of Pb Addition on Optical and Spectral Properties of Se–Ge Thin Films
- Autores: Deepika 1, Singh H.1, Saxena N.2
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Afiliações:
- Deptt. of Applied Sciences, The NorthCap University
- Room No. 14–15, Semiconductor and Polymer Science Lab., Deptt. of Physics, University of Rajasthan
- Edição: Volume 45, Nº 3 (2019)
- Páginas: 217-223
- Seção: Article
- URL: https://journals.rcsi.science/1087-6596/article/view/217109
- DOI: https://doi.org/10.1134/S1087659619030027
- ID: 217109
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Resumo
The present paper reports the optical and spectral properties of amorphous Se58Ge42 – xPbx (x = 6, 12, 18, 20) thin films deposited onto pre-cleaned glass substrate under a vacuum of 10–5 Torr. The amorphous samples have been prepared using melt quenching method. The structural characterization of the samples has been done using XRD and EDXA. The optical absorption and transmission spectra were recorded using UV-Vis spectrophotometer in the wavelength range 400–2500 nm. The study of absorption spectra shows that sample exhibits indirect optical band gap which decreases on increase of Pb content in Se–Ge system. This decrease in band gap has been explained in terms of chemical bond approach and density of state model. Transmission spectra have been utilized to obtain refractive index, dielectric constant and thickness of films. It is found that refractive index increases with increase in Pb content in Se–Ge system.
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Sobre autores
Deepika
Deptt. of Applied Sciences, The NorthCap University
Autor responsável pela correspondência
Email: deepika.spsl@gmail.com
Índia, Gurgaon
Hukum Singh
Deptt. of Applied Sciences, The NorthCap University
Email: deepika.spsl@gmail.com
Índia, Gurgaon
N. Saxena
Room No. 14–15, Semiconductor and Polymer Science Lab., Deptt. of Physics, University of Rajasthan
Email: deepika.spsl@gmail.com
Índia, Jaipur