Investigating the Relationship between the Conditions of Polythiophene Electrosynthesis and the Pseudocapacitive Properties of Polythiophene-Based Electrodes


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Abstract

Thin polythiophene films are electrochemically deposited onto different types of substrates. We investigate the effects the conditions of polythiophene (PT) synthesis have on the pseudocapacitive (charge accumulation) properties of fabricated electrodes and identify the optimal synthesis conditions. Composite electrodes with a polyacrylamide (PAM) sublayer modified with trifluoromethanesulfonic acid exhibit the largest specific capacity (up to 550 F g−1). With a PAM sublayer, polythiophene-based electrodes exhibit lesser (by 19%) losses of the initial capacitance compared to their PAM-free counterparts. The surface morphology of electrodes fabricated using steel support is studied by scanning electron microscopy and low-temperature nitrogen adsorption.

About the authors

M. S. Masalovich

Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences

Author for correspondence.
Email: mas-maria@yandex.ru
Russian Federation, St. Petersburg, 199034

A. G. Ivanova

Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences

Email: mas-maria@yandex.ru
Russian Federation, St. Petersburg, 199034

O. A. Zagrebelnyy

Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences

Email: mas-maria@yandex.ru
Russian Federation, St. Petersburg, 199034

A. E. Baranchikov

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: mas-maria@yandex.ru
Russian Federation, Moscow, 119991

N. N. Saprykina

Institute of Macromolecular Compounds, Russian Academy of Sciences

Email: mas-maria@yandex.ru
Russian Federation, St. Petersburg, 199034

G. P. Kopitsa

Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences; Konstantinov Institute of Nuclear Physics, St. Petersburg, National Research Center Kurchatov Institute,
Russian Academy of Sciences

Email: mas-maria@yandex.ru
Russian Federation, St. Petersburg, 199034; Gatchina, St. Petersburg, 188300

O. A. Shilova

Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences

Email: mas-maria@yandex.ru
Russian Federation, St. Petersburg, 199034


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