Synthesis and Properties of Thin Films Formed by Vapor Deposition from Tetramethylsilane in a Radio-Frequency Inductively Coupled Plasma Discharge

Abstract

Thin films of hydrogenated silicon carbide (SiC_x:H) and carbonitride (SiC_xN_y:H) are synthesized in a reactor with inductively coupled RF plasma with the introduction of tetramethylsilane vapors and additive gases—argon and/or nitrogen. The process is carried out at different synthesis temperatures, plasma power, and partial pressure of tetramethylsilane and additive gases in the reactor. The dependences on the synthesis conditions of the films’ growth rate, chemical composition, and properties such as the light transmission coefficient, refractive index, optical band gap, and dielectric constant are obtained. The weak dependence of the films’ composition and properties on the preset synthesis conditions is a characteristic feature of the studied process within the investigated range of conditions. The possible reasons of this phenomenon and the results of in situ studies of the gas phase composition in the plasma are examined.