Distribution of nonequilibrium carriers in the region of a p–n junction under various photogeneration conditions

Abstract

A model is described, which makes it possible to calculate the distribution of nonequilibrium carriers and an electric field near the p–n junction, which arose as a result of the internal photoeffect. Using laser illumination, the possibilities to control the properties of nanolayered structures sensitive to the concentration of free carriers are analyzed. The mutual location of the region of the intense absorption of radiation and the p–n junction itself is varied and the linear and square mechanisms of carrier recombination are analyzed.