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Chalcogenide glass for AgI-based nanolayered films


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

Glass in the system GeSe2–Sb2Se3–AgI in monolith and film states has been investigated. Special attention has been paid to the crystallization stability and ionic conductivity of glass and films. The films were fabricated by the laser ablation of glass in a vacuum. The fabricated glass has been studied by the methods of X-ray diffraction and differential thermal analyses and impedance measurement. The sputtered films have been studied by X-ray diffraction and Raman spectroscopy in order to control their stability to crystallization and to compare their structure with that of monolith glass. It has been demonstrated that glass containing 40 mol % AgI is characterized with the softening point that is substantial for chalcogenide glass (190°C) and high crystallization stability, whereas the logarithm of their specific conductivity at 100°C is a value of the order of–3.5 at the activation energy of around 0.5 eV.

Авторлар туралы

Yu. Tver’yanovich

Institute of Chemistry

Хат алмасуға жауапты Автор.
Email: tys@bk.ru
Ресей, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

S. Fokina

Institute of Chemistry

Email: tys@bk.ru
Ресей, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

A. Tver’yanovich

Institute of Chemistry

Email: tys@bk.ru
Ресей, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

A. Kurochkin

Institute of Chemistry

Email: tys@bk.ru
Ресей, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

V. Tomaev

Institute of Chemistry

Email: tys@bk.ru
Ресей, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

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