Chalcogenide glass for AgI-based nanolayered films


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Abstract

Glass in the system GeSe2–Sb2Se3–AgI in monolith and film states has been investigated. Special attention has been paid to the crystallization stability and ionic conductivity of glass and films. The films were fabricated by the laser ablation of glass in a vacuum. The fabricated glass has been studied by the methods of X-ray diffraction and differential thermal analyses and impedance measurement. The sputtered films have been studied by X-ray diffraction and Raman spectroscopy in order to control their stability to crystallization and to compare their structure with that of monolith glass. It has been demonstrated that glass containing 40 mol % AgI is characterized with the softening point that is substantial for chalcogenide glass (190°C) and high crystallization stability, whereas the logarithm of their specific conductivity at 100°C is a value of the order of–3.5 at the activation energy of around 0.5 eV.

About the authors

Yu. S. Tver’yanovich

Institute of Chemistry

Author for correspondence.
Email: tys@bk.ru
Russian Federation, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

S. V. Fokina

Institute of Chemistry

Email: tys@bk.ru
Russian Federation, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

A. S. Tver’yanovich

Institute of Chemistry

Email: tys@bk.ru
Russian Federation, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

A. V. Kurochkin

Institute of Chemistry

Email: tys@bk.ru
Russian Federation, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

V. V. Tomaev

Institute of Chemistry

Email: tys@bk.ru
Russian Federation, pr. Universitetskii 26, St. Petersburg, Petrodvorets, 19850

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