Email this article Passively Q-Switched Mode-Locking Nd:(Gd0.3Y0.7)2SiO5 Laser Based on Semiconductor Saturable Absorber Mirror†
- Authors: Tian Z.1,2, Wang B.1, Gao C.1, Wu Q.2, Xu X.3, Xu J.4, Zhang B.1
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Affiliations:
- School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications
- Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University
- School of Physics Science and Engineering, Institute for Advanced Study, Tongji University
- Issue: Vol 40, No 1 (2019)
- Pages: 94-99
- Section: Article
- URL: https://journals.rcsi.science/1071-2836/article/view/248663
- DOI: https://doi.org/10.1007/s10946-019-09775-7
- ID: 248663
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Abstract
A diode-end-pumped continuous-wave and passively Q-switched mode-locked Nd:(Gd0.3Y0.7)2SiO5 laser was designed. At a pump power of 0.8W, we achieve dual-wavelength continuous-wave (CW) laser generation at wavelengths around 1,073.26 and 1,076.62 nm. Using a semiconductor saturable absorber mirror (SESAM), we obtain passively Q-switched mode-locked (QML) operation. A maximum average output power of 171 mW is obtained under a pump power of 5 W. The optical conversion efficiency for the QML laser is 3.4%. The duration of the mode-locked pulse is estimated to be about 649 ps at a repetition rate of 101.34 MHz.
About the authors
Zhen Tian
School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University; State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications
Email: bingyuanzhang@yahoo.com
China, Liaocheng, 252059; Beijing
Beibei Wang
School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University
Email: bingyuanzhang@yahoo.com
China, Liaocheng, 252059
Congcong Gao
School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University
Email: bingyuanzhang@yahoo.com
China, Liaocheng, 252059
Qiang Wu
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications
Email: bingyuanzhang@yahoo.com
China, Beijing
Xiaodong Xu
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University
Email: bingyuanzhang@yahoo.com
China, Xuzhou, 221116
Jun Xu
School of Physics Science and Engineering, Institute for Advanced Study, Tongji University
Email: bingyuanzhang@yahoo.com
China, Shanghai, 200092
Bingyuan Zhang
School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University
Author for correspondence.
Email: bingyuanzhang@yahoo.com
China, Liaocheng, 252059
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