Copper nanowire arrays surface wettability control using atomic layer deposition of TiO2

Аннотация

Template two step electrodeposition method and atomic layer deposition were used to synthesize copper nanowires of varied length (1.2 to 26.2 μm) and copper nanowires coated with titanium dioxide. As a result of the atomic layer deposition of TiO₂, coated nanowires demonstrated an up to 10-fold decrease in the wetting angle, compared with uncoated nanowires. It was found the dissipation rate is substantially higher for nanowires coated by the atomic layer deposition method (100 s) as compared with the uncoated copper nanowires (400 s), which assumes the positive properties of water propagation along the surface, necessary for improving the heat transfer. It was also found that the water contact angle for uncoated nanowires and those coated with TiO₂ by the atomic layer deposition (ALD) gradually increases as the samples are kept in air. A gradual increase in wettability was also observed for smooth silicon wafers coated by ALD of TiO₂, which were exposed to air. On the coated silicon substrates, the wetting angle gradually increased from 10° to approximately 56° in the course of four days. In addition, it was shown that copper nanowires coated with TiO₂ by the atomic layer deposition method have an excellent corrosion resistance, compared with uncoated nanowires, when brought in contact with air and water.