Low-temperature deposition of tin(IV) oxide films for thin-film power sources

Аннотация

Thin films of tin(IV) oxide were deposited in a Picosun R-150 installation from tetraethyltin using remote inductively coupled plasma at temperatures lower than 200°C with the aim of developing a material for thin-film current sources. The thickness and morphology of the films were studied by spectral ellipsometry and scanning electron microscopy. Both the thickness and roughness of the films considerably decrease with an increase in the synthesis temperature in the interval 100–180°C. The films are X-ray amorphous. As shown by X-ray photoelectron spectroscopy, tin in the films is in oxidation state +4.