Gas-sensitive properties of thin nickel oxide films
- 作者: Kondrateva A.S.1, Bespalova P.G.1, Filatov L.A.1, Tanklevskaya E.M.2, Pavlov S.I.2, Alexandrov S.E.1
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隶属关系:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- 期: 卷 90, 编号 6 (2017)
- 页面: 846-852
- 栏目: Inorganic Synthesis and Industrial Inorganic Chemistry
- URL: https://journals.rcsi.science/1070-4272/article/view/214949
- DOI: https://doi.org/10.1134/S1070427217060039
- ID: 214949
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详细
The results of a study of the gas-sensitive properties of nickel oxide layers with respect to n-hexane, acetone, ethanol, benzene, o-xylene, toluene and ammonia are presented. NiO layers 100 ± 5 nm thick were obtained by chemical vapor deposition in the systems (EtCp)2Ni–О2–Ar and (EtCp)2Ni–О3–О2–Ar. The electrical resistance of the layers changes in the presence of hexane, ethanol, benzene, and ammonia vapors. The electrical resistance of the obtained layers changed in the presence of vapors of hexane, ethanol, benzene and ammonia. Response and recovery time of the sensing element of the gas sensors did not exceed 6 s in the temperature range 500–600 K.
作者简介
A. Kondrateva
Peter the Great St. Petersburg Polytechnic University
编辑信件的主要联系方式.
Email: a_kondrateva@spbstu.ru
俄罗斯联邦, ul. Politekhnicheskaya 29, St. Petersburg, 195251
P. Bespalova
Peter the Great St. Petersburg Polytechnic University
Email: a_kondrateva@spbstu.ru
俄罗斯联邦, ul. Politekhnicheskaya 29, St. Petersburg, 195251
L. Filatov
Peter the Great St. Petersburg Polytechnic University
Email: a_kondrateva@spbstu.ru
俄罗斯联邦, ul. Politekhnicheskaya 29, St. Petersburg, 195251
E. Tanklevskaya
Ioffe Institute
Email: a_kondrateva@spbstu.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Pavlov
Ioffe Institute
Email: a_kondrateva@spbstu.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Alexandrov
Peter the Great St. Petersburg Polytechnic University
Email: a_kondrateva@spbstu.ru
俄罗斯联邦, ul. Politekhnicheskaya 29, St. Petersburg, 195251
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