Atomic layer deposition of tantalum oxide with controlled oxygen deficiency for making resistive memory structures


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Abstract

TaOx films with controlled ratio of Ta4+ and Ta5+ atoms were prepared at different hydrogen concentrations in plasma. As shown by X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry, the chemical state of Ta4+ corresponds to oxygen vacancies in the TaOx film. Electrophysical studies of the metal–dielectric–metal structures revealed an increase in the leakage current by four orders of magnitude as the hydrogen concentration in the plasma was increased from 7 to 70%, which is due to an increase in the concentration of oxygen vacancies in TaOx. A test structure of a resistive memory cell was made on the basis of the nonstoichiometric TaOx obtained. It withstood more than 106 rewriting cycles. The suggested atomic layer deposition process shows promise for solving one of the main problems of resistive memory: extension of its working life.

About the authors

K. V. Egorov

Moscow Institute of Physics and Technology (State University)

Author for correspondence.
Email: egorov.constantin@gmail.com
Russian Federation, Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141701

D. S. Kuz’michev

Moscow Institute of Physics and Technology (State University)

Email: egorov.constantin@gmail.com
Russian Federation, Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141701

Yu. Yu. Lebedinskii

Moscow Institute of Physics and Technology (State University)

Email: egorov.constantin@gmail.com
Russian Federation, Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141701

A. M. Markeev

Moscow Institute of Physics and Technology (State University)

Email: egorov.constantin@gmail.com
Russian Federation, Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141701

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