Fundamental physicochemical regularities of the chemical vapor deposition of nickel oxide layers

Abstract

Physicochemical regularities of the chemical vapor deposition (CVD) of nickel oxide layers in the (EtCp)₂Ni–O₃–O₂–Ar reaction system at a reduced pressure were studied. Dependences of growth rate of NiO layers on deposition temperature, linear gas flow velocity, and roughness were derived. A mass-spectrometric study of the composition of the reaction gas phases formed in these systems provided evidence about the fundamental physicochemical regularities of the CVD process, which is important for solving applied problems associated with the development of technological equipment and industrial technology for deposition of NiO layers.