Plasma chemical etching of photoresist layers based on diazonaphthoquinones in an installation with remote oxygen plasma
- Авторы: Speshilova A.B.1, Solov’ev Y.V.1, Alexandrov S.E.1
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Учреждения:
- Peter the Great Polytechnic University
- Выпуск: Том 89, № 8 (2016)
- Страницы: 1317-1321
- Раздел: Various Technological Processes
- URL: https://journals.rcsi.science/1070-4272/article/view/214192
- DOI: https://doi.org/10.1134/S1070427216080164
- ID: 214192
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Аннотация
Specific features of remote plasma chemical etching of photoresist layers based on diazonaphthoquinones in oxygen at reduced pressure was studied. The possibility of performing “soft” etching at rates of 4–10 nm min–1 to obtain a photoresist layer surface with the root-mean-square roughness no higher than 0.2 nm was demonstrated.
Об авторах
A. Speshilova
Peter the Great Polytechnic University
Автор, ответственный за переписку.
Email: speshaab@yandex.ru
Россия, Politekhnicheskaya ul. 29, St. Petersburg, 195251
Yu. Solov’ev
Peter the Great Polytechnic University
Email: speshaab@yandex.ru
Россия, Politekhnicheskaya ul. 29, St. Petersburg, 195251
S. Alexandrov
Peter the Great Polytechnic University
Email: speshaab@yandex.ru
Россия, Politekhnicheskaya ul. 29, St. Petersburg, 195251
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