Email this article Plasma chemical etching of photoresist layers based on diazonaphthoquinones in an installation with remote oxygen plasma
- Authors: Speshilova A.B.1, Solov’ev Y.V.1, Alexandrov S.E.1
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Affiliations:
- Peter the Great Polytechnic University
- Issue: Vol 89, No 8 (2016)
- Pages: 1317-1321
- Section: Various Technological Processes
- URL: https://journals.rcsi.science/1070-4272/article/view/214192
- DOI: https://doi.org/10.1134/S1070427216080164
- ID: 214192
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Abstract
Specific features of remote plasma chemical etching of photoresist layers based on diazonaphthoquinones in oxygen at reduced pressure was studied. The possibility of performing “soft” etching at rates of 4–10 nm min–1 to obtain a photoresist layer surface with the root-mean-square roughness no higher than 0.2 nm was demonstrated.
About the authors
A. B. Speshilova
Peter the Great Polytechnic University
Author for correspondence.
Email: speshaab@yandex.ru
Russian Federation, Politekhnicheskaya ul. 29, St. Petersburg, 195251
Yu. V. Solov’ev
Peter the Great Polytechnic University
Email: speshaab@yandex.ru
Russian Federation, Politekhnicheskaya ul. 29, St. Petersburg, 195251
S. E. Alexandrov
Peter the Great Polytechnic University
Email: speshaab@yandex.ru
Russian Federation, Politekhnicheskaya ul. 29, St. Petersburg, 195251
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