Preparation and Crystallization Characteristics of Hydrogenated Nanocrystalline Silicon Thin Films by Plasma-Enhanced Chemical Vapor Deposition
- Authors: Yuqing Huang 1, Liu J.1, Wang J.1, Bao D.2, Huang S.1
- 
							Affiliations: 
							- Provincial Key Laboratory of Solid State Optoelectronic Devices, Zhejiang Normal University
- Hengdian Group DMEGC Magnetics Co., Ltd
 
- Issue: Vol 55, No 3 (2019)
- Pages: 259-267
- Section: Article
- URL: https://journals.rcsi.science/1068-3755/article/view/231211
- DOI: https://doi.org/10.3103/S1068375519030098
- ID: 231211
Cite item
Abstract
Both intrinsic and doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma-enhanced chemical vapor deposition (PECVD) with various process parameters, such as a hydrogen dilution ratio, power, substrate temperature, and doping ratios of phosphorus or boron. The crystallization characteristics of nc-Si:H thin films grown with various process parameters were carefully and systematically investigated by Raman spectroscopy. Generally speaking, the results show that the higher the hydrogen dilution ratio and power or the lower the doping ratio, the higher the average grain size and the crystalline volume fraction of both thin films prepared and investigated here. In addition, a p-i-n type nc-Si:H thin film solar cell, which has an open circuit voltage of 660 mV and a short circuit current intensity of 13.06 mA/cm2, was directly prepared on a flat transparent conductive glass substrate.
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About the authors
Yuqing Huang
Provincial Key Laboratory of Solid State Optoelectronic Devices, Zhejiang Normal University
														Email: huangshihua@zjnu.cn
				                					                																			                												                	China, 							Zhejiang, 321004						
Jian Liu
Provincial Key Laboratory of Solid State Optoelectronic Devices, Zhejiang Normal University
														Email: huangshihua@zjnu.cn
				                					                																			                												                	China, 							Zhejiang, 321004						
Jia Wang
Provincial Key Laboratory of Solid State Optoelectronic Devices, Zhejiang Normal University
														Email: huangshihua@zjnu.cn
				                					                																			                												                	China, 							Zhejiang, 321004						
Daxin Bao
Hengdian Group DMEGC Magnetics Co., Ltd
														Email: huangshihua@zjnu.cn
				                					                																			                												                	China, 							 Zhejiang, 322118						
Shihua Huang
Provincial Key Laboratory of Solid State Optoelectronic Devices, Zhejiang Normal University
							Author for correspondence.
							Email: huangshihua@zjnu.cn
				                					                																			                												                	China, 							Zhejiang, 321004						
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