Investigation of structural features of As2S3–Se multilayer nanostructure by Raman spectroscopy
- Authors: Abaskin V.1, Achimova E.1, Meshalkin A.1, Prisacar A.1, Triduh G.1, Vlcek M.2, Loghina L.2, Voynarovich I.2
- 
							Affiliations: 
							- Institute of Applied Physics
- Department of General and Inorganic Chemistry, Faculty of Chemical Technology
 
- Issue: Vol 52, No 4 (2016)
- Pages: 380-386
- Section: Article
- URL: https://journals.rcsi.science/1068-3755/article/view/229805
- DOI: https://doi.org/10.3103/S1068375516040025
- ID: 229805
Cite item
Abstract
The focus of this research is on the investigation of structural changes in the As2S3–Se multilayer nanostructure and on the examination of a relative contribution of As2S3 and Se layers to nanostructuring by measuring the Raman spectra. The formation of the As2S3-Se nanostructure by an alternate As2S3 and Se layers deposition was applied. The diffraction efficiency dependence on the exposure of a CW DPSS laser were monitored in a transmission mode of the1st order diffracted beam intensity and measured in real-time at the normal incidence of the laser diode beam (λ = 650 nm). From the comparison of these dependences for a set of samples we have chosen the multilayer nanostructure As2S3–Se with optimal recording properties meaning maximum both the value and the rate of diffraction efficiency. Our results are found to be of practical interest as they allow a significant improvement of the diffraction efficiency of the directly recorded relief gratings.
About the authors
V. Abaskin
Institute of Applied Physics
														Email: achimova@phys.asm.md
				                					                																			                												                	Moldova, Republic of, 							Academiei str. 5, Chisinau, MD-2028						
E. Achimova
Institute of Applied Physics
							Author for correspondence.
							Email: achimova@phys.asm.md
				                					                																			                												                	Moldova, Republic of, 							Academiei str. 5, Chisinau, MD-2028						
A. Meshalkin
Institute of Applied Physics
														Email: achimova@phys.asm.md
				                					                																			                												                	Moldova, Republic of, 							Academiei str. 5, Chisinau, MD-2028						
A. Prisacar
Institute of Applied Physics
														Email: achimova@phys.asm.md
				                					                																			                												                	Moldova, Republic of, 							Academiei str. 5, Chisinau, MD-2028						
G. Triduh
Institute of Applied Physics
														Email: achimova@phys.asm.md
				                					                																			                												                	Moldova, Republic of, 							Academiei str. 5, Chisinau, MD-2028						
M. Vlcek
Department of General and Inorganic Chemistry, Faculty of Chemical Technology
														Email: achimova@phys.asm.md
				                					                																			                												                	Czech Republic, 							Pardubice, 53210						
L. Loghina
Department of General and Inorganic Chemistry, Faculty of Chemical Technology
														Email: achimova@phys.asm.md
				                					                																			                												                	Czech Republic, 							Pardubice, 53210						
I. Voynarovich
Department of General and Inorganic Chemistry, Faculty of Chemical Technology
														Email: achimova@phys.asm.md
				                					                																			                												                	Czech Republic, 							Pardubice, 53210						
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