Investigation of structural features of As2S3–Se multilayer nanostructure by Raman spectroscopy

Abstract

The focus of this research is on the investigation of structural changes in the As₂S₃–Se multilayer nanostructure and on the examination of a relative contribution of As₂S₃ and Se layers to nanostructuring by measuring the Raman spectra. The formation of the As₂S₃-Se nanostructure by an alternate As₂S₃ and Se layers deposition was applied. The diffraction efficiency dependence on the exposure of a CW DPSS laser were monitored in a transmission mode of the1st order diffracted beam intensity and measured in real-time at the normal incidence of the laser diode beam (λ = 650 nm). From the comparison of these dependences for a set of samples we have chosen the multilayer nanostructure As₂S₃–Se with optimal recording properties meaning maximum both the value and the rate of diffraction efficiency. Our results are found to be of practical interest as they allow a significant improvement of the diffraction efficiency of the directly recorded relief gratings.