Email this article Photovoltaic structures ITO/SiOх/n-Si of increased efficiency
- Authors: Simashkevich A.1, Sherban D.1, Caraman M.2, Rusu M.3, Bruc L.1, Curmei N.1
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Affiliations:
- Institute of Applied Physics
- State University of Moldova
- Helmholtz-Zentrum Berlin für Materialien und Energie
- Issue: Vol 52, No 3 (2016)
- Pages: 284-288
- Section: Article
- URL: https://journals.rcsi.science/1068-3755/article/view/229736
- DOI: https://doi.org/10.3103/S1068375516030108
- ID: 229736
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Abstract
Structures ITO/SiOх/n-Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as photoelectric converters is investigated. It is shown that structures with an unetched surface of silicon wafers are the most efficient. Solar cells based on studied ITO/SiOх/n-Si structures with an inverse layer demonstrate an efficiency close to 16% in AM 1.5 conditions.
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About the authors
A. Simashkevich
Institute of Applied Physics
Author for correspondence.
Email: alexeisimashkevich@hotmail.com
Moldova, Republic of, Academiei str. 5, Chisinau, MD-2028
D. Sherban
Institute of Applied Physics
Email: alexeisimashkevich@hotmail.com
Moldova, Republic of, Academiei str. 5, Chisinau, MD-2028
M. Caraman
State University of Moldova
Email: alexeisimashkevich@hotmail.com
Moldova, Republic of, Alexei Mateevici str. 60, Chisinau, MD-2012
M. Rusu
Helmholtz-Zentrum Berlin für Materialien und Energie
Email: alexeisimashkevich@hotmail.com
Germany, Hahn-Meitner-Platz 1, Berlin
L. Bruc
Institute of Applied Physics
Email: alexeisimashkevich@hotmail.com
Moldova, Republic of, Academiei str. 5, Chisinau, MD-2028
N. Curmei
Institute of Applied Physics
Email: alexeisimashkevich@hotmail.com
Moldova, Republic of, Academiei str. 5, Chisinau, MD-2028
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