Photovoltaic structures ITO/SiOх/n-Si of increased efficiency


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Аннотация

Structures ITO/SiOх/n-Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as photoelectric converters is investigated. It is shown that structures with an unetched surface of silicon wafers are the most efficient. Solar cells based on studied ITO/SiOх/n-Si structures with an inverse layer demonstrate an efficiency close to 16% in AM 1.5 conditions.

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Авторлар туралы

A. Simashkevich

Institute of Applied Physics

Хат алмасуға жауапты Автор.
Email: alexeisimashkevich@hotmail.com
Молдавия, Academiei str. 5, Chisinau, MD-2028

D. Sherban

Institute of Applied Physics

Email: alexeisimashkevich@hotmail.com
Молдавия, Academiei str. 5, Chisinau, MD-2028

M. Caraman

State University of Moldova

Email: alexeisimashkevich@hotmail.com
Молдавия, Alexei Mateevici str. 60, Chisinau, MD-2012

M. Rusu

Helmholtz-Zentrum Berlin für Materialien und Energie

Email: alexeisimashkevich@hotmail.com
Германия, Hahn-Meitner-Platz 1, Berlin

L. Bruc

Institute of Applied Physics

Email: alexeisimashkevich@hotmail.com
Молдавия, Academiei str. 5, Chisinau, MD-2028

N. Curmei

Institute of Applied Physics

Email: alexeisimashkevich@hotmail.com
Молдавия, Academiei str. 5, Chisinau, MD-2028

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