Field-Effect Transistor Based on Zinc Oxide Using Diffusion Technology
- 作者: Hovsepyan R.K.1,2, Aghamalyan N.R.1,2, Kafadaryan Y.A.1,2, Arakelyan A.A.1,2, Mnatsakanyan H.G.1,2, Petrosyan S.I.1,2
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隶属关系:
- Russian-Armenian University
- Institute for Physical Research
- 期: 卷 54, 编号 3 (2019)
- 页面: 287-295
- 栏目: Article
- URL: https://journals.rcsi.science/1068-3372/article/view/228934
- DOI: https://doi.org/10.3103/S1068337219030095
- ID: 228934
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详细
Based on the technology developed by authors of the local diffusion doping of certain parts of the ZnO film of the donor (Ga) and acceptor (Li) impurities, a transparent field-effect transistor with the n-type channel was manufactured. The MgF2 films were used as a gate insulator. The field effect and the dark electrical characteristics of the structures were investigated. The field phototransistors based on these structures have been developed. The photoelectric characteristics of the field phototransistors were investigated, and the mechanism of the photoelectric amplification was proposed.
作者简介
R. Hovsepyan
Russian-Armenian University; Institute for Physical Research
编辑信件的主要联系方式.
Email: ruben.ovsepyan@mail.ru
亚美尼亚, Yerevan; Ashtarak
N. Aghamalyan
Russian-Armenian University; Institute for Physical Research
Email: ruben.ovsepyan@mail.ru
亚美尼亚, Yerevan; Ashtarak
Y. Kafadaryan
Russian-Armenian University; Institute for Physical Research
Email: ruben.ovsepyan@mail.ru
亚美尼亚, Yerevan; Ashtarak
A. Arakelyan
Russian-Armenian University; Institute for Physical Research
Email: ruben.ovsepyan@mail.ru
亚美尼亚, Yerevan; Ashtarak
H. Mnatsakanyan
Russian-Armenian University; Institute for Physical Research
Email: ruben.ovsepyan@mail.ru
亚美尼亚, Yerevan; Ashtarak
S. Petrosyan
Russian-Armenian University; Institute for Physical Research
Email: ruben.ovsepyan@mail.ru
亚美尼亚, Yerevan; Ashtarak
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