Some peculiarities of magnetoresistance and Hall resistance of Sb2Te3 nanoplates
- Авторлар: Harutyunyan S.1
-
Мекемелер:
- Institute for Physical Research
- Шығарылым: Том 52, № 3 (2017)
- Беттер: 242-248
- Бөлім: Article
- URL: https://journals.rcsi.science/1068-3372/article/view/228427
- DOI: https://doi.org/10.3103/S1068337217030094
- ID: 228427
Дәйексөз келтіру
Аннотация
Antimony telluride (Sb2Te3) nanoplates of various thickness were grown by the vapor phase deposition method. The Hall resistance and magnetoresistance of the samples were measured in magnetic fields up to 9 T at temperatures from 2 to 300 K. Temperature dependence of the magnetoresistance and Hall resistance of the nanoplates shows a strong dependence on the thickness of the samples. Relatively thick samples show a nonlinear dependence of the Hall resistance on magnetic field. The measurement data are analyzed within the model of multi-channel transport. The difference in behavior is attributed to the existence of two channels of charge transfer with high and low mobility.
Негізгі сөздер
Авторлар туралы
S. Harutyunyan
Institute for Physical Research
Хат алмасуға жауапты Автор.
Email: sergeyhar56@gmail.com
Армения, Ashtarak