Narrow bandgap mid-infrared photodetectors based on InAsSbP quantum dots
- Authors: Harutyunyan V.G.1, Gambaryan K.M.1, Aroutiounian V.M.1
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Affiliations:
- Yerevan State University
- Issue: Vol 52, No 1 (2017)
- Pages: 43-48
- Section: Article
- URL: https://journals.rcsi.science/1068-3372/article/view/228237
- DOI: https://doi.org/10.3103/S1068337217010078
- ID: 228237
Cite item
Abstract
The results of investigations of mid-infrared photodetectors based on InAsSbP quantum dot (QD) grown on InAs(100) substrate by modified liquid phase epitaxy are presented. The atomic force microscope measurements have shown that the surface density of grown QDs is (4–8) × 109 cm−2. Also, the morphology and crystalline quality of grown QDs are investigated by a scanning tunneling microscope. Photodetectors based on n-InAs(100) substrate with InAsSbP QDs on its surface were fabricated in the form of a photoconductor cell. The photoresponse spectrum extended up to 4 μm was observed. The optical properties of fabricated structures were investigated under He–Ne laser irradiation with wavelength of 1.15 μm. It was found that the relative surface conductance increases by 16% at power density of 0.15 W/cm2. Capacitance hysteresis with maximal remnant capacitance of 2.17 nF at 103 Hz was observed as well.
Keywords
About the authors
V. G. Harutyunyan
Yerevan State University
Author for correspondence.
Email: harutyunyan@ysu.am
Armenia, Yerevan
K. M. Gambaryan
Yerevan State University
Email: harutyunyan@ysu.am
Armenia, Yerevan
V. M. Aroutiounian
Yerevan State University
Email: harutyunyan@ysu.am
Armenia, Yerevan