Gas Nanosensors Made from Semiconductor Metal Oxides
- 作者: Aroutiounian V.M.1
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隶属关系:
- Yerevan State University
- 期: 卷 54, 编号 4 (2019)
- 页面: 356-367
- 栏目: Article
- URL: https://journals.rcsi.science/1068-3372/article/view/228993
- DOI: https://doi.org/10.3103/S1068337219040054
- ID: 228993
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详细
Usually semiconductor gas sensors made from metal oxides need in high pre-heating of work body. Advantages for nanoscale sensors are possibilities to work at remarkable lower than 300°C temperature of its work body up to room temperature (practically without pre-heating of the sensor). Todays' experimental results obtained for gas sensors made from metal oxides are reported in this review.
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