Memristive Effect in Two-Layered Structures Based on Lithium Doped ZnO Films

Abstract

The structure of Au/Li10ZnO/Li1ZnO/LaB₆ consisting of upper Au and lower LaB₆ ohmic electrodes and a p-n junction p-Li10ZnO/n-Li1ZnO, which has the resistive memory where two functions are simultaneously combined, that is, an address access and the process of reading and storing of information is investigated. The resistance ratio (R_reset/R_set = 10), the data storage time (> 3 hours) and the number of switching cycles (> 350) are improved as compared to the corresponding single-layer structures. The resistive memory is explained by the modulation effect of the Li10ZnO layer, the ferroelectric polarization of which, depending on the orientation, changes the width and height of the barrier of the p-n junction formed at the p-Li10ZnO/n-Li1ZnO contact.