Laser emission efficiency of semiconductor target of gas diode in the picosecond range

A. S. Nasibov; K. V. Berezhnoy; M. B. Bochkarev; A. G. Sadykova; S. A. Shunailov; M. I. Yalandin

doi:10.3103/S1068335617010043

Laser emission efficiency of semiconductor target of gas diode in the picosecond range

Autores: Nasibov A.S.¹, Berezhnoy K.V.¹, Bochkarev M.B.², Sadykova A.G.², Shunailov S.A.², Yalandin M.I.²
Afiliações:
1. Lebedev Physical Institute
2. Institute of Electrophysics, Ural Branch
Edição: Volume 44, Nº 1 (2017)
Páginas: 13-16
Seção: Article
URL: https://journals.rcsi.science/1068-3356/article/view/228204
DOI: https://doi.org/10.3103/S1068335617010043
ID: 228204

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Laser radiation excited in a cadmiumsulfide semiconductor target (ST) (λ = 522 nm) by a high-intensity subnanosecond electron beam (EB) with an energy of 70–150 keV has a maximum intensity of 3 · 10⁷W/cm² at an efficiency of~10%. Lasing arose at the EB exciting pulse front. The laser radiation pulse shape reproduced the EB pulse shape.