Email this article Laser emission efficiency of semiconductor target of gas diode in the picosecond range
- Authors: Nasibov A.S.1, Berezhnoy K.V.1, Bochkarev M.B.2, Sadykova A.G.2, Shunailov S.A.2, Yalandin M.I.2
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Affiliations:
- Lebedev Physical Institute
- Institute of Electrophysics, Ural Branch
- Issue: Vol 44, No 1 (2017)
- Pages: 13-16
- Section: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228204
- DOI: https://doi.org/10.3103/S1068335617010043
- ID: 228204
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Abstract
Laser radiation excited in a cadmiumsulfide semiconductor target (ST) (λ = 522 nm) by a high-intensity subnanosecond electron beam (EB) with an energy of 70–150 keV has a maximum intensity of 3 · 107W/cm2 at an efficiency of~10%. Lasing arose at the EB exciting pulse front. The laser radiation pulse shape reproduced the EB pulse shape.
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About the authors
A. S. Nasibov
Lebedev Physical Institute
Author for correspondence.
Email: nasibov@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
K. V. Berezhnoy
Lebedev Physical Institute
Email: yalandin@iep.uran.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
M. B. Bochkarev
Institute of Electrophysics, Ural Branch
Email: yalandin@iep.uran.ru
Russian Federation, ul. Amundsena 106, Ekaterinburg, 620016
A. G. Sadykova
Institute of Electrophysics, Ural Branch
Email: yalandin@iep.uran.ru
Russian Federation, ul. Amundsena 106, Ekaterinburg, 620016
S. A. Shunailov
Institute of Electrophysics, Ural Branch
Email: yalandin@iep.uran.ru
Russian Federation, ul. Amundsena 106, Ekaterinburg, 620016
M. I. Yalandin
Institute of Electrophysics, Ural Branch
Author for correspondence.
Email: yalandin@iep.uran.ru
Russian Federation, ul. Amundsena 106, Ekaterinburg, 620016
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