Study of Microstructure Features of the Surface Region of the Photovoltaic Converter with an Antireflective Porous Silicon Film and an n+—p Junction

Abstract

Using methods for measuring photocurrent and Raman scattering spectra the surface region microstructure of the silicon photovoltaic converter with n⁺—p junction and an antireflective porous silicon film is studied. The n⁺—p junction is formed by thermal diffusion of phosphorus from a porous film. It is found that high-temperature treatment during diffusion results in coarsening silicon crystallites and a decrease in the defect density in the porous silicon film. It is noted that the n⁺ —p junction is formed within the largest crystallites of the porous silicon film.