g-Factor Calculation in Small Quantum Dots

Abstract

It is shown that the effective Lande splitting factor or g-factor of electrons localized on heterostructures such as small quantum dots is always formed as a difference of two values. The first of themrelates to thematerial of the dot itself and critically depends on its sizes and shape; the second one relates to the barriermaterial (surrounding matrix); therewith, the dependence on the latter does not disappear at any dot sizes. The known (k, p) Kane theory defining the renormalization of electron mass and g-factor in bulk semiconductors, is modified for small quantum dots with “incomplete” band structure. Specific calculations of the electron ground state energy and g-factor are performed for the covariant InAs/AlSb heterostructure not localizing holes and, hence, capable of forming pure one-electron states (prototypes of solid-state qubits).