Hardness and electrical resistivity of Al–13 wt % Mg2Si pseudoeutectic alloy

Аннотация

In the present work, effect of growth rates on microhardness, electrical properties and microstructure for directionally solidified Al–13 wt % Mg₂Si pseudoeutectic alloy at a constant temperature gradient were studied. Directional solidification process were carried out with five different growth rates (V = 8.33–175.0 μm/s) at a constant temperature gradient (G = 6.68 K/mm) by using a Bridgman type directional solidification furnace. Microstructure of directionally solidified Al–13 wt % Mg₂Si pseudoeutectic alloy was observed as Mg₂Si coral-like structure phase dispersed into primary α-Al phase matrix. The electrical resistivity for Al–13 wt % Mg₂Si pseudoeutectic alloy, were measured by the d.c. four-point probe method. The dependency ofmicrohardness and electrical resistivity on growth rates were obtained as HV = 135.7 (V)^0.09 and ρ = 17.30 × 10⁻⁸(V)^0.08, respectively for Al–Mg₂Si pseudoeutectic alloy. The results obtained in present work were compared with the previous similar experimental results.