Active sites on the surface of nanocrystalline semiconductor oxides ZnO and SnO2 and gas sensitivity
- 作者: Marikutsa A.1, Vorob´eva N.1, Rumyantseva M.1, Gas´kov A.1
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隶属关系:
- Department of Chemistry, M. V. Lomonosov Moscow State University
- 期: 卷 66, 编号 10 (2017)
- 页面: 1728-1764
- 栏目: Reviews
- URL: https://journals.rcsi.science/1066-5285/article/view/241393
- DOI: https://doi.org/10.1007/s11172-017-1949-7
- ID: 241393
如何引用文章
详细
The data on active sites on the surface of nanocrystalline semiconductor oxides ZnO and SnO2 are reviewed. Their interrelation to the gas sensitivity of the materials toward the main air pollutants, viz., CO, NO2, NH3, and H2S, is analyzed. The influence of the synthesis conditions, microstructure parameters, content of dopant impurities, and the presence of catalytic modifiers on the concentration of various active sites on the oxide surface is considered. Relationships between the concentration of the surface sites and sensitivity of the oxides to gases with various chemical properties are revealed. The active sites responsible for the formation of a sensory signal upon the selective interaction with molecules of the detected gases are determined.
作者简介
A. Marikutsa
Department of Chemistry, M. V. Lomonosov Moscow State University
编辑信件的主要联系方式.
Email: artem.marikutsa@gmail.com
俄罗斯联邦, Building 3, 1 Leninskie Gory, Moscow, 119992
N. Vorob´eva
Department of Chemistry, M. V. Lomonosov Moscow State University
Email: artem.marikutsa@gmail.com
俄罗斯联邦, Building 3, 1 Leninskie Gory, Moscow, 119992
M. Rumyantseva
Department of Chemistry, M. V. Lomonosov Moscow State University
Email: artem.marikutsa@gmail.com
俄罗斯联邦, Building 3, 1 Leninskie Gory, Moscow, 119992
A. Gas´kov
Department of Chemistry, M. V. Lomonosov Moscow State University
Email: artem.marikutsa@gmail.com
俄罗斯联邦, Building 3, 1 Leninskie Gory, Moscow, 119992