Impact sensitivity of energy systems based on nanoporous silicon and oxidant: influence of the hydrogen content and specific surface
- Авторлар: Mikhailov Y.1, Garanin V.1, Ganin Y.1, Goncharov T.1, Ganina L.1, Zegrya G.2
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Мекемелер:
- Institute of Problems of Chemical Physics, Russian Academy of Sciences
- A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences
- Шығарылым: Том 65, № 10 (2016)
- Беттер: 2400-2404
- Бөлім: Full Articles
- URL: https://journals.rcsi.science/1066-5285/article/view/239084
- DOI: https://doi.org/10.1007/s11172-016-1596-4
- ID: 239084
Дәйексөз келтіру
Аннотация
The impact sensitivity of the energy systems based on nanoporous silicon, obtained by electrochemical etching of monocrystalline silicon wafers in an HF-containing electrolyte, and calcium perchlorate was studied using a modified Weller—Ventselberg technique (estimation of the impact sensitivity of initiating explosives). The impact sensitivity of these systems is shown to be determined by both the presence of hydrogen, which is stored on the porous silicon surface during the preparation of the latter, and also the influence of other factors, including the specific surface of porous silicon. The composition, amount of the generated gas, and gas evolution rate during nonisothermal and isothermal calcination of porous silicon in a temperature range of 60—120 °С were determined using methods of thermal gravimetry (TG), measurement of the gas volume, and mass spectrometry. The generated gas almost completely consists of hydrogen, and its content in the studied samples of porous silicon achieved ~3.8 wt.%. The calculated activation energy of the hydrogen evolution process in vacuo was 103.7±3.3 kJ mol–1. The dependences of the impact sensitivity of the energy composition based on porous silicon and heat of combustion of porous silicon on oxygen on the hydrogen content were established. The impact sensitivity of the energy system decreases with a decrease in the hydrogen content in porous silicon and its specific surface.
Авторлар туралы
Yu. Mikhailov
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: zegrya@theory.ioffe.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432
V. Garanin
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: zegrya@theory.ioffe.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432
Yu. Ganin
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: zegrya@theory.ioffe.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432
T. Goncharov
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: zegrya@theory.ioffe.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432
L. Ganina
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: ganina@icp.ac.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432
G. Zegrya
A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: zegrya@theory.ioffe.ru
Ресей, 26 ul. Politekhnicheskaya, St. Petersburg, 194021