Impact sensitivity of energy systems based on nanoporous silicon and oxidant: influence of the hydrogen content and specific surface


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The impact sensitivity of the energy systems based on nanoporous silicon, obtained by electrochemical etching of monocrystalline silicon wafers in an HF-containing electrolyte, and calcium perchlorate was studied using a modified Weller—Ventselberg technique (estimation of the impact sensitivity of initiating explosives). The impact sensitivity of these systems is shown to be determined by both the presence of hydrogen, which is stored on the porous silicon surface during the preparation of the latter, and also the influence of other factors, including the specific surface of porous silicon. The composition, amount of the generated gas, and gas evolution rate during nonisothermal and isothermal calcination of porous silicon in a temperature range of 60—120 °С were determined using methods of thermal gravimetry (TG), measurement of the gas volume, and mass spectrometry. The generated gas almost completely consists of hydrogen, and its content in the studied samples of porous silicon achieved ~3.8 wt.%. The calculated activation energy of the hydrogen evolution process in vacuo was 103.7±3.3 kJ mol–1. The dependences of the impact sensitivity of the energy composition based on porous silicon and heat of combustion of porous silicon on oxygen on the hydrogen content were established. The impact sensitivity of the energy system decreases with a decrease in the hydrogen content in porous silicon and its specific surface.

Авторлар туралы

Yu. Mikhailov

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Email: zegrya@theory.ioffe.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432

V. Garanin

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Email: zegrya@theory.ioffe.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432

Yu. Ganin

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Email: zegrya@theory.ioffe.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432

T. Goncharov

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Email: zegrya@theory.ioffe.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432

L. Ganina

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: ganina@icp.ac.ru
Ресей, 1 prosp. Akad. Semenova, Chernogolovka, Moscow Region, 142432

G. Zegrya

A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: zegrya@theory.ioffe.ru
Ресей, 26 ul. Politekhnicheskaya, St. Petersburg, 194021


© Springer Science+Business Media New York, 2016

Осы сайт cookie-файлдарды пайдаланады

Біздің сайтты пайдалануды жалғастыра отырып, сіз сайттың дұрыс жұмыс істеуін қамтамасыз ететін cookie файлдарын өңдеуге келісім бересіз.< / br>< / br>cookie файлдары туралы< / a>