Defects in Arsenic Implanted  р  +  –n - and  n  +  –p - Structures Based on MBE Grown CdHgTe Films

I. I. Izhnin; E. I. Fitsych; A. V. Voitsekhovskii; A. G. Korotaev; K. D. Mynbaev; V. S. Varavin; S. A. Dvoretsky; N. N. Mikhailov; M. V. Yakushev; A. Yu. Bonchyk; H. V. Savytskyy; Z. Świątek

doi:10.1007/s11182-018-1278-9

Defects in Arsenic Implanted р⁺–n- and n⁺–p- Structures Based on MBE Grown CdHgTe Films

Авторлар: Izhnin I.I.¹^,2, Fitsych E.I.¹, Voitsekhovskii A.V.², Korotaev A.G.², Mynbaev K.D.³^,4, Varavin V.S.⁵, Dvoretsky S.A.²^,5, Mikhailov N.N.⁵, Yakushev M.V.⁵, Bonchyk A.Y.⁶, Savytskyy H.V.⁶, Świątek Z.⁷
Мекемелер:
1. Scientific Research Company “Carat”
2. National Research Tomsk State University
3. Ioffe Physical-Technical Institute of the Russian Academy of Sciences
4. University of Information Technologies, Mechanics, and Optics
5. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
6. Ya. S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics, National Academy of Sciences of Ukraine
7. Institute of Metallurgy and Materials Science of the Polish Academy of Sciences
Шығарылым: Том 60, № 10 (2018)
Беттер: 1752-1757
Бөлім: Article
URL: https://journals.rcsi.science/1064-8887/article/view/239487
DOI: https://doi.org/10.1007/s11182-018-1278-9
ID: 239487

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Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd_xHg_1–xTe (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n⁺–p- and n⁺–n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p⁺–n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects.

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CdHgTe, ion implantation of As, radiation defects, activation annealing

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Defects in Arsenic Implanted р⁺–n- and n⁺–p- Structures Based on MBE Grown CdHgTe Films

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Аннотация

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I. Izhnin

E. Fitsych

A. Voitsekhovskii

A. Korotaev

K. Mynbaev

V. Varavin

S. Dvoretsky

N. Mikhailov

M. Yakushev

A. Bonchyk

H. Savytskyy

Z. Świątek

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Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films

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Аннотация

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Defects in Arsenic Implanted р⁺–n- and n⁺–p- Structures Based on MBE Grown CdHgTe Films