To the Theory of Electron Passage in a Semiconductor Structure Consisting of Alternating Asymmetric Rectangular Potential Wells and Barriers
- Autores: Rasulov V.R.1
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Afiliações:
- Fergana State University
- Edição: Volume 59, Nº 10 (2017)
- Páginas: 1699-1702
- Seção: Article
- URL: https://journals.rcsi.science/1064-8887/article/view/238987
- DOI: https://doi.org/10.1007/s11182-017-0963-4
- ID: 238987
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Resumo
Propagation of electron waves in a medium, whose properties vary only along a certain direction, is theoretically studied. The approach is based on the use of the single-electron stationary Schrödinger equation for the description of elastic scattering processes, including tunneling, of non-interacting spinless particles while maintaining their total energy.
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Sobre autores
V. Rasulov
Fergana State University
Autor responsável pela correspondência
Email: r_rasulov51@mail.ru
Uzbequistão, Fergana
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