Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

Resumo

Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 10¹⁷ cm^–3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As₂ dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As₂Te₃ complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.