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Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Grigor’ev D.V., Lyapunov D.V.
Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces
Kokhanenko A.P., Lozovoy K.A., Voitsekhovskii A.V.
Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator
Dzyadukh S.M., Voitsekhovskii A.V., Nesmelov S.N., Sidorov G.Y., Varavin V.S., Vasil’ev V.V., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V.
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