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卷 62, 编号 1 (2019)
Electrophysical Characteristics of the Pentacene-based MIS Structures with a SiO2 Insulator
Novikov V., Voitsekhovskii A., Nesmelov S., Dzyadukh S., Kopylova T., Degtyarenko K., Chernikov E., Kalygina V.
PDF
(Eng)
卷 61, 编号 11 (2019)
Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer
Voitsekhovskii A., Nesmelov S., Dzyadukh S.
PDF
(Eng)
卷 60, 编号 2 (2017)
Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates
Varavin V., Vasil’ev V., Dvoretskii S., Mikhailov N., Yakushev M., Sidorov G., Voitsekhovskii A., Nesmelov S., Dzyadukh S.
PDF
(Eng)
卷 60, 编号 1 (2017)
Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures
Voitsekhovskii A., Nesmelov S., Dzyadukh S., Grigor’ev D., Lyapunov D.
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(Eng)
卷 59, 编号 7 (2016)
Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode
Voitsekhovskii A., Nesmelov S., Dzyadukh S.
PDF
(Eng)
卷 59, 编号 2 (2016)
Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy
Voitsekhovskii A., Nesmelov S., Dzyadukh S.
PDF
(Eng)
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