Poly-para-xylylene-Based Memristors on Flexible Substrates
- 作者: Shvetsov B.1,2, Matsukatova A.1,2, Minnekhanov A.2, Nesmelov A.2, Goncharov B.2, Lapkin D.2, Martyshov M.1, Forsh P.2,3, Rylkov V.2,4, Demin V.2, Emelyanov A.2,3
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隶属关系:
- Moscow State University
- National Research Centre Kurchatov Institute
- Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies, Moscow Institute of Physics and Technology
- Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences
- 期: 卷 45, 编号 11 (2019)
- 页面: 1103-1106
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208476
- DOI: https://doi.org/10.1134/S1063785019110130
- ID: 208476
如何引用文章
详细
Flexible memristive structures based on poly-para-xylelene layers, which exhibit stable resistive switchings and are resistant to bendings with radii up to 10 mm, have been prepared and studied. A two-step scheme of setting the resistive state of the memristive structure is proposed, which is based on monitoring the compliance current passing through the structure. The results obtained allow memristive structures based on poly-para-xylelene layers to be used for neuromorphic computational systems and biocompatible “wearable” electronics.
作者简介
B. Shvetsov
Moscow State University; National Research Centre Kurchatov Institute
编辑信件的主要联系方式.
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 119991; Moscow, 123182
A. Matsukatova
Moscow State University; National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 119991; Moscow, 123182
A. Minnekhanov
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 123182
A. Nesmelov
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 123182
B. Goncharov
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 123182
D. Lapkin
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 123182
M. Martyshov
Moscow State University
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 119991
P. Forsh
National Research Centre Kurchatov Institute; Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies,Moscow Institute of Physics and Technology
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 123182; Moscow, 123098
V. Rylkov
National Research Centre Kurchatov Institute; Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 123182; Fryazino, Moscow oblast, 141190
V. Demin
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 123182
A. Emelyanov
National Research Centre Kurchatov Institute; Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies,Moscow Institute of Physics and Technology
Email: b.shvetsov15@physics.msu.ru
俄罗斯联邦, Moscow, 123182; Moscow, 123098