Email this article Poly-para-xylylene-Based Memristors on Flexible Substrates
- Authors: Shvetsov B.S.1,2, Matsukatova A.N.1,2, Minnekhanov A.A.2, Nesmelov A.A.2, Goncharov B.V.2, Lapkin D.A.2, Martyshov M.N.1, Forsh P.A.2,3, Rylkov V.V.2,4, Demin V.A.2, Emelyanov A.V.2,3
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Affiliations:
- Moscow State University
- National Research Centre Kurchatov Institute
- Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies, Moscow Institute of Physics and Technology
- Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences
- Issue: Vol 45, No 11 (2019)
- Pages: 1103-1106
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208476
- DOI: https://doi.org/10.1134/S1063785019110130
- ID: 208476
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Abstract
Flexible memristive structures based on poly-para-xylelene layers, which exhibit stable resistive switchings and are resistant to bendings with radii up to 10 mm, have been prepared and studied. A two-step scheme of setting the resistive state of the memristive structure is proposed, which is based on monitoring the compliance current passing through the structure. The results obtained allow memristive structures based on poly-para-xylelene layers to be used for neuromorphic computational systems and biocompatible “wearable” electronics.
About the authors
B. S. Shvetsov
Moscow State University; National Research Centre Kurchatov Institute
Author for correspondence.
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 119991; Moscow, 123182
A. N. Matsukatova
Moscow State University; National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 119991; Moscow, 123182
A. A. Minnekhanov
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 123182
A. A. Nesmelov
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 123182
B. V. Goncharov
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 123182
D. A. Lapkin
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 123182
M. N. Martyshov
Moscow State University
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 119991
P. A. Forsh
National Research Centre Kurchatov Institute; Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies,Moscow Institute of Physics and Technology
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 123182; Moscow, 123098
V. V. Rylkov
National Research Centre Kurchatov Institute; Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 123182; Fryazino, Moscow oblast, 141190
V. A. Demin
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 123182
A. V. Emelyanov
National Research Centre Kurchatov Institute; Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies,Moscow Institute of Physics and Technology
Email: b.shvetsov15@physics.msu.ru
Russian Federation, Moscow, 123182; Moscow, 123098
