The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions
- 作者: Ivanov P.1, Potapov A.1, Kudoyarov M.1, Kozlovskii M.1, Samsonova T.1
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隶属关系:
- Ioffe Physical Technical Institute
- 期: 卷 44, 编号 3 (2018)
- 页面: 229-231
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207476
- DOI: https://doi.org/10.1134/S1063785018030197
- ID: 207476
如何引用文章
详细
Irradiation of crystalline n-type silicon carbide (n-SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating (i-SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i-SiC layers has been studied. The most high-ohmic ion-irradiated i-SiC layers with room-temperature resistivity of no less than 1.6 × 1013 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 107 Ω cm.
作者简介
P. Ivanov
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: Pavel.Ivanov@ms.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Potapov
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@ms.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Kudoyarov
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@ms.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Kozlovskii
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@ms.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
T. Samsonova
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@ms.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021