The Effect of Constant Magnetic Fields on the Dynamics of Molten Zones in the Field of Structural Inhomogeneity of Silicon
- Авторы: Skvortsov A.1, Pshonkin D.1, Koryachko M.1, Rybakova M.1
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Учреждения:
- Moscow Polytechnic University
- Выпуск: Том 44, № 6 (2018)
- Страницы: 498-501
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207702
- DOI: https://doi.org/10.1134/S106378501806010X
- ID: 207702
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Аннотация
The effect of constant magnetic fields on the formation and dynamics of molten Al–Si inclusions in silicon in the field of structural inhomogeneity of a crystal (the dislocation density-gradient field) is considered. The migration rates of liquid inclusions in crystals have been found experimentally under conditions of prevailing melting–crystallization mechanisms at the phase interfaces between the melt and matrix before and after magnetic exposure. It has been found that a preliminarily exposure of dislocation silicon samples in a constant magnetic field leads to an increase in the displacement speed of molten zones in the density-gradient field.
Об авторах
A. Skvortsov
Moscow Polytechnic University
Автор, ответственный за переписку.
Email: SkvortsovAA2009@yandex.ru
Россия, Moscow, 107023
D. Pshonkin
Moscow Polytechnic University
Email: SkvortsovAA2009@yandex.ru
Россия, Moscow, 107023
M. Koryachko
Moscow Polytechnic University
Email: SkvortsovAA2009@yandex.ru
Россия, Moscow, 107023
M. Rybakova
Moscow Polytechnic University
Email: SkvortsovAA2009@yandex.ru
Россия, Moscow, 107023