Generation of Charge Carriers in Uniformly Heated Si–Ge Films Heavily Doped with Titanium
- Авторы: Kuchkanov S.1, Ashurov K.1
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Учреждения:
- Arifov Institute of Ion-Plasma and Laser Technologies
- Выпуск: Том 44, № 4 (2018)
- Страницы: 334-336
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207595
- DOI: https://doi.org/10.1134/S106378501804020X
- ID: 207595
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Аннотация
We have studied the generation of charge carriers and development of the electromotive force (emf) in uniformly heated n-type Si–Ge films heavily doped with titanium obtained by chemical-vapor deposition on p-type silicon substrates. A maximum emf value of ∼3 mV was observed at temperatures within 500–600 K for dark short-circuit currents ∼0.5–1 μA, the value of which increased with the temperature to reach ∼3 μA at 800 K.
Об авторах
Sh. Kuchkanov
Arifov Institute of Ion-Plasma and Laser Technologies
Автор, ответственный за переписку.
Email: sher.kurbonov@inbox.ru
Узбекистан, Tashkent, 100125
Kh. Ashurov
Arifov Institute of Ion-Plasma and Laser Technologies
Email: sher.kurbonov@inbox.ru
Узбекистан, Tashkent, 100125