Graphene synthesis by cold implantation of carbon recoil atoms
- Авторы: Saraykin V.1, Agafonov Y.2, Zinenko V.2, Kononenko O.2
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Учреждения:
- Lukin Scientific Research Institute of Physical Problems
- Institute of Microelectronics Technology and High-Purity Materials
- Выпуск: Том 43, № 6 (2017)
- Страницы: 567-569
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/205042
- DOI: https://doi.org/10.1134/S1063785017060153
- ID: 205042
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Аннотация
A new method of introducing carbon into catalytic metal films for graphene synthesis is proposed. The method is based on the phenomenon of carbon recoil atoms from a layer of methane molecules that are adsorbed on a metal film being incorporated into this film under the action of bombardment with inert gas ions. To increase the thickness of adsorbed methane layer, the substrate is cooled down to −190°C. The proposed method has been implemented on a polycrystalline nickel film. After the final annealing, Raman spectroscopy showed the presence of numerous fragments of multilayer graphene on the film surface.
Об авторах
V. Saraykin
Lukin Scientific Research Institute of Physical Problems
Email: zinenko@iptm.ru
Россия, Zelenograd, Moscow, 124460
Yu. Agafonov
Institute of Microelectronics Technology and High-Purity Materials
Email: zinenko@iptm.ru
Россия, Chernogolovka, Moscow oblast, 142432
V. Zinenko
Institute of Microelectronics Technology and High-Purity Materials
Автор, ответственный за переписку.
Email: zinenko@iptm.ru
Россия, Chernogolovka, Moscow oblast, 142432
O. Kononenko
Institute of Microelectronics Technology and High-Purity Materials
Email: zinenko@iptm.ru
Россия, Chernogolovka, Moscow oblast, 142432