Subnanosecond impact-ionization switching of silicon structures without p–n junctions

Аннотация

It is shown that an application of a fast-rising high-voltage pulse to an n⁺–n–n⁺ silicon structure leads to subnanosecond avalanche breakdown, generation of electron–hole plasma throughout the entire structure, and structure switching to the conducting state in a time of about 100 ps. The predicted effect is similar to the delayed avalanche breakdown of reverse-biased p⁺–n–n⁺ diode structures; however, it is implemented in a structure without p–n junctions.