Luminescence of solar cells with a-Si:H/c-Si heterojunctions
- Авторы: Zhigunov D.M.1, Il’in A.S.1,2, Forsh P.A.1,2, Bobyl’ A.V.3, Verbitskii V.N.3, Terukov E.I.3, Kashkarov P.K.1,2
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Учреждения:
- Moscow State University
- Russian Research Centre Kurchatov Institute
- Ioffe Physical Technical Institute
- Выпуск: Том 43, № 5 (2017)
- Страницы: 496-498
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/204788
- DOI: https://doi.org/10.1134/S1063785017050261
- ID: 204788
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Аннотация
We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.
Об авторах
D. Zhigunov
Moscow State University
Email: phorsh@mail.ru
Россия, Moscow, 119991
A. Il’in
Moscow State University; Russian Research Centre Kurchatov Institute
Email: phorsh@mail.ru
Россия, Moscow, 119991; Moscow, 123182
P. Forsh
Moscow State University; Russian Research Centre Kurchatov Institute
Автор, ответственный за переписку.
Email: phorsh@mail.ru
Россия, Moscow, 119991; Moscow, 123182
A. Bobyl’
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Россия, St. Petersburg, 194021
V. Verbitskii
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Россия, St. Petersburg, 194021
E. Terukov
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Россия, St. Petersburg, 194021
P. Kashkarov
Moscow State University; Russian Research Centre Kurchatov Institute
Email: phorsh@mail.ru
Россия, Moscow, 119991; Moscow, 123182
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