All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures
- Авторы: Podoskin A.1, Shashkin I.1, Slipchenko S.1, Pikhtin N.1, Tarasov I.1
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Учреждения:
- Ioffe Physical Technical Institute
- Выпуск: Том 43, № 1 (2017)
- Страницы: 101-103
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/202760
- DOI: https://doi.org/10.1134/S1063785017010254
- ID: 202760
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Аннотация
All-optical cells based on AlGaAs/GaAs/InGaAs laser heterostructures for a 905-nm wavelength have been developed, which operate in the regime of optical-power modulation by means of controlled generation switching between the Fabry–Perot cavity modes and high-Q closed mode. At a modulated power of 1.6 W, a mode-switching time of 1.2 ns and smaller is achieved.
Об авторах
A. Podoskin
Ioffe Physical Technical Institute
Автор, ответственный за переписку.
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Shashkin
Ioffe Physical Technical Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
S. Slipchenko
Ioffe Physical Technical Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Pikhtin
Ioffe Physical Technical Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Tarasov
Ioffe Physical Technical Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021