Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas
- Авторы: Vendik O.1, Vendik I.1, Tural’chuk P.1, Parnes Y.1, Parnes M.2
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Учреждения:
- St. Petersburg State Electrotechnical University “LETI,”
- Rezonans Company
- Выпуск: Том 42, № 11 (2016)
- Страницы: 1061-1063
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/201856
- DOI: https://doi.org/10.1134/S1063785016110110
- ID: 201856
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Аннотация
A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.
Об авторах
O. Vendik
St. Petersburg State Electrotechnical University “LETI,”
Email: ogvendik@rambler.ru
Россия, St. Petersburg, 197022
I. Vendik
St. Petersburg State Electrotechnical University “LETI,”
Автор, ответственный за переписку.
Email: ogvendik@rambler.ru
Россия, St. Petersburg, 197022
P. Tural’chuk
St. Petersburg State Electrotechnical University “LETI,”
Email: ogvendik@rambler.ru
Россия, St. Petersburg, 197022
Ya. Parnes
St. Petersburg State Electrotechnical University “LETI,”
Email: ogvendik@rambler.ru
Россия, St. Petersburg, 197022
M. Parnes
Rezonans Company
Email: ogvendik@rambler.ru
Россия, St. Petersburg, 197376