Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas
- Authors: Vendik O.G.1, Vendik I.B.1, Tural’chuk P.A.1, Parnes Y.M.1, Parnes M.D.2
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Affiliations:
- St. Petersburg State Electrotechnical University “LETI,”
- Rezonans Company
- Issue: Vol 42, No 11 (2016)
- Pages: 1061-1063
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/201856
- DOI: https://doi.org/10.1134/S1063785016110110
- ID: 201856
Cite item
Abstract
A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.
About the authors
O. G. Vendik
St. Petersburg State Electrotechnical University “LETI,”
Email: ogvendik@rambler.ru
Russian Federation, St. Petersburg, 197022
I. B. Vendik
St. Petersburg State Electrotechnical University “LETI,”
Author for correspondence.
Email: ogvendik@rambler.ru
Russian Federation, St. Petersburg, 197022
P. A. Tural’chuk
St. Petersburg State Electrotechnical University “LETI,”
Email: ogvendik@rambler.ru
Russian Federation, St. Petersburg, 197022
Ya. M. Parnes
St. Petersburg State Electrotechnical University “LETI,”
Email: ogvendik@rambler.ru
Russian Federation, St. Petersburg, 197022
M. D. Parnes
Rezonans Company
Email: ogvendik@rambler.ru
Russian Federation, St. Petersburg, 197376