Отправить статью по E-mail Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
- Авторы: Tikhov S.V.1, Gorshkov O.N.1,2, Koryazhkina M.N.1, Antonov I.N.1,2, Kasatkin A.P.1
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Учреждения:
- Lobachevsky State University of Nizhny Novgorod
- Physical Technical Research Institute
- Выпуск: Том 42, № 5 (2016)
- Страницы: 536-538
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/199277
- DOI: https://doi.org/10.1134/S1063785016050308
- ID: 199277
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Аннотация
We have studied light-induced resistive switching in metal–insulator–semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.
Об авторах
S. Tikhov
Lobachevsky State University of Nizhny Novgorod
Email: mahavenok@mail.ru
Россия, Nizhny Novgorod, 603950
O. Gorshkov
Lobachevsky State University of Nizhny Novgorod; Physical Technical Research Institute
Email: mahavenok@mail.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
M. Koryazhkina
Lobachevsky State University of Nizhny Novgorod
Автор, ответственный за переписку.
Email: mahavenok@mail.ru
Россия, Nizhny Novgorod, 603950
I. Antonov
Lobachevsky State University of Nizhny Novgorod; Physical Technical Research Institute
Email: mahavenok@mail.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Kasatkin
Lobachevsky State University of Nizhny Novgorod
Email: mahavenok@mail.ru
Россия, Nizhny Novgorod, 603950
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