Enviar artigo por via de e-mail Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
- Autores: Tikhov S.V.1, Gorshkov O.N.1,2, Koryazhkina M.N.1, Antonov I.N.1,2, Kasatkin A.P.1
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Afiliações:
- Lobachevsky State University of Nizhny Novgorod
- Physical Technical Research Institute
- Edição: Volume 42, Nº 5 (2016)
- Páginas: 536-538
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/199277
- DOI: https://doi.org/10.1134/S1063785016050308
- ID: 199277
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Resumo
We have studied light-induced resistive switching in metal–insulator–semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.
Sobre autores
S. Tikhov
Lobachevsky State University of Nizhny Novgorod
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950
O. Gorshkov
Lobachevsky State University of Nizhny Novgorod; Physical Technical Research Institute
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
M. Koryazhkina
Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950
I. Antonov
Lobachevsky State University of Nizhny Novgorod; Physical Technical Research Institute
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Kasatkin
Lobachevsky State University of Nizhny Novgorod
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950
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