Enviar artigo por via de e-mail Semiconductor Plasma Antennas Formed by Laser Radiation
- Autores: Bogachev N.1,2,3, Gusein-zade N.1,3, Zhluktova I.1, Kazantsev S.1, Kamynin V.1, Podlesnykh S.1, Rogalin V.4, Trikshev A.1, Filatova S.1, Tsvetkov V.1,5, Shokhrin D.2
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Afiliações:
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- MIREA—Russian Technological University
- Pirogov Russian National Research Medical University
- Institute for Electrophysics and Electric Power, Russian Academy of Sciences
- National Nuclear Research University Moscow Engineering Physics Institute
- Edição: Volume 45, Nº 12 (2019)
- Páginas: 1223-1225
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208507
- DOI: https://doi.org/10.1134/S1063785019120174
- ID: 208507
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Resumo
Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.
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Sobre autores
N. Bogachev
Prokhorov General Physics Institute of the Russian Academy of Sciences; MIREA—Russian Technological University; Pirogov Russian National Research Medical University
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119991; Moscow, 119454; Moscow, 117997
N. Gusein-zade
Prokhorov General Physics Institute of the Russian Academy of Sciences; Pirogov Russian National Research Medical University
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119991; Moscow, 117997
I. Zhluktova
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119991
S. Kazantsev
Prokhorov General Physics Institute of the Russian Academy of Sciences
Autor responsável pela correspondência
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119991
V. Kamynin
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119991
S. Podlesnykh
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119991
V. Rogalin
Institute for Electrophysics and Electric Power, Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Rússia, St. Petersburg, 191186
A. Trikshev
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119991
S. Filatova
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119991
V. Tsvetkov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Nuclear Research University Moscow Engineering Physics Institute
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119991; Moscow, 115409
D. Shokhrin
MIREA—Russian Technological University
Email: s-kazantsev@mail.ru
Rússia, Moscow, 119454
